E组含有金属粉尘的大气，包括铝、伋其商业合金，以吸具有类似危险特性的其他金属。F组含有炭黑、煤尘或煤饼粉尘的大气。G组含有面粉、淀粉或谷物粉尘的大气。典型的I类位置炼油厂和汽油储存和分配区域。将 易燃液体用于零件清洗或其他操作的工业企业。利用天然气和石油生产化学品的石化公司。可能存在清洗液蒸汽的干洗厂。在产品喷涂区域喷涂油漆或塑料的公司飞机库和燃料服务区公用气厂,以及涉及液化石油气或天然气储存和处理的操作。典型的I类位置谷物升降机、面粉和饲料磨机。制造、使用或储存镁铝粉末的工厂具有化学或冶金工艺的工厂、塑料、药品和木材等的生产商.淀粉或糖果的生产商香料研磨植物、糖植物和可可植物。
TVB-1202-1ANET
注意:更换组件可能会损害本质安全。罗克韦尔自动化出版物42DR-IN001 B-EN-P- 2016年5月3本质安全传感器选煤厂和其他碳处理或加工区域。典型的I1类位置纺织厂、轧棉厂、棉花种子厂和亚麻加工厂。任何塑造、粉碎或切割木材并产生锯屑或飞屑的植物。5500系列42DRP型照相头和42DTB电源底座(已拆除盖子)。说明42DR系列5500 QD本质安全型微型自给式光电控制器各包括一个组合调制状态指示器光源、 高速硅光电探测器和双开集电极销售状态输出，数字控制系统或E-M控制继电器。42DR系列5500型控制器 。
TVB-1202-1ANET
其工作原理是,通过一定的激励方式,在半导体物质的能带(导带与价带)之间,或者半导体物质的能带与杂质(受主或施主)能级之间,实现非平衡载流子的粒子数反转,当处于粒子数反转状态的大量电子与空穴复合时,便产生受激发射作用.半导体激光器的激励方式主要有三种,即电注入式,光泵式和高能电子束激励式.电注入式半导体激光器,一般是由GaAS(砷化镓),InAS(砷化铟),Insb(锑化铟)等材料制成的半导体面结型二极管,沿正向偏压注入电流进行激励,在结平面区域产生受激发射.光泵式半导体激光器,一般用N型或P型半导体单晶(如GaAS,InAs,InSb等)做工作物质,以其他激光器发出的激光作光泵激励.高能电子束激励式半导体激光器,一般也是用N型或者P型半导体单晶(如PbS,CdS,ZhO等)做工作物质,通过由外部注入高能电子束进行激励.在半导体激光器件中,目前性能较好,应用较广的是具有双异质结构的电注入式GaAs二极管激光器.
TVB-1202-1ANET
Group E contains metal dust in the atmosphere, including aluminum and its commercial alloys, to absorb other metals with similar hazardous characteristics. Atmospheres containing carbon black, coal dust, or coal cake dust in Group F. Atmosphere containing flour, starch, or grain dust in Group G. Typical Class I locations include refineries and gasoline storage and distribution areas. Industrial enterprises that use flammable liquids for part cleaning or other operations. Petrochemical companies that use natural gas and oil to produce chemicals. Dry cleaning plants that may have cleaning solution vapors. The company’s aircraft hangar and fuel service area public gas plant that sprays paint or plastic in the product spraying area, as well as operations involving the storage and processing of liquefied petroleum gas or natural gas. Typical Class I locations include grain elevators, flour and feed mills. Factories that manufacture, use, or store magnesium aluminum powder are factories with chemical or metallurgical processes, manufacturers of plastics, pharmaceuticals, and wood, and manufacturers of starch or candy. Flavor grinding plants, sugar plants, and cocoa plants.
TVB-1202-1ANE、
Attention: Replacing components may damage intrinsic safety. Rockwell Automation Publication 42DR-IN001 B-EN-P – May 2016 Intrinsically Safe Sensors Coal Preparation Plants and Other Carbon Processing or Processing Areas. Typical Class I1 locations include textile mills, gin mills, cotton seed mills, and linen processing factories. Any plant that shapes, crushes, or cuts wood and produces sawdust or flying debris. 5500 series 42DRP camera head and 42DTB power base (with cover removed). Explanation: The 42DR series 5500 QD intrinsically safe miniature self-contained photoelectric controller each includes a combined modulation status indicator light source, high-speed silicon photodetector, and dual open collector sales status output, digital control system or E-M control relay. 42DR series 5500 controller.
TVB-1202-1ANET
Its working principle is to achieve non equilibrium carrier population inversion between the energy bands (conduction band and valence band) of semiconductor materials, or between the energy bands of semiconductor materials and impurity (acceptor or donor) energy levels, through a certain excitation method. When a large number of electrons in the population inversion state recombine with holes, stimulated emission occurs. There are three main excitation methods for semiconductor lasers, namely electric injection, Optically pumped and high-energy electron beam excited semiconductor lasers. Electrically injected semiconductor lasers are generally semiconductor surface junction diodes made of materials such as GaAS (gallium arsenide), InAS (indium arsenide), InSb (indium antimonide), etc. They are excited by a forward bias injection current to generate stimulated emission in the junction plane region. Optically pumped semiconductor lasers generally use N-type or P-type semiconductor single crystals (such as GaAS, InAs, InSb, etc.) as working materials, Using lasers emitted by other lasers as optical pump excitation. High energy electron beam excited semiconductor lasers generally use N-type or P-type semiconductor single crystals (such as PbS, CdS, ZhO, etc.) as working materials, and are excited by external injection of high-energy electron beams. In semiconductor laser devices, the current performance is good, and the widely used is the electrically injected GaAs diode laser with double heterostructures
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