5SHY4045L0001 3BHB018162R0001集成栅极换流晶闸管IGCT(Intergrated Gate Commutated Thyristors)是 1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一 种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功半导体开关器件,具有晶闸管的通态特性及晶体管的开关特性。5SHY4045L0001 3BHB018162R0001由于采用了缓冲结构以及浅层发射极技术,因而使动态损耗降低了约50%，另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二_极管，从而以其独特的方式实现了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性有机结合.IGCT使变流装置在功率、可靠性、 开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。5SHY4045L0001 3BHB018162R0001是将GTO芯片与反并联二极管和栅极驱动电路集成在一起，再与其栅极驱动器在外围以低电感方式连接,结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点。
5SHY4045L0003
在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。5SHY4045L00013BHB0181 62R0001具有电流大、电压高、开关频率高、可靠性高、结构紧凑、损耗低等特点， 而且造成本低,成品率高,有很好的应用前景。5SHY4045L0001 3BHB0181 62R0001采用晶闸管技术的GTO是常用的大功率轩关器件，它相对于采用晶体管技术的IGBT在截止电压上有更高的性能，但旷泛应用的标准GTO驱动技术造成不均匀的开通和关断过程，需要高成本的dv/dt和di/dt吸收电路和较大功率的栅极驱动单元,因而造成可靠性下降，价格较高,也不利于串联。5SHY4045L0001 3BHB018162R0001但是,在大功率MCT技术尚未成熟以前，IGCT已经成为高压大功率低频交流器的优选方案。
5SHY4045L0003
5SHY4045L0001 3BHB018162R0001 Integrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor device introduced in 1996 for use in giant power electronic complete sets. IGCT is a new high-power semiconductor switching device based on GTO structure, utilizing integrated gate structure for gate hard drive, using buffer layer structure and anode transparent emitter technology. It has the on state characteristics of thyristors and the switching characteristics of transistors. 5SHY4045L0001 3BHB018162R0001 uses buffering structure and shallow emitter technology, which reduces dynamic losses by about 50%. In addition, this type of device also integrates freewheeling II with good dynamic characteristics on one chip_ The transistor, in its unique way, achieves the organic combination of low pass state voltage drop, high blocking voltage, and transistor stable switching characteristics of the thyristor. IGCT has made significant progress in power, reliability, switching speed, efficiency, cost, weight, and volume of the converter device, bringing a new leap to the complete power electronic device. 5SHY4045L0001 3BHB018162R0001 integrates a GTO chip with an anti parallel diode and gate driver circuit, and then connects it with its gate driver in a low inductance manner on the periphery. It combines the advantages of stable turn-off ability of transistors and low on state loss of thyristors.
5SHY4045L0003
In the conduction phase, the performance of thyristors is utilized, while in the off phase, the characteristics of transistors are presented. 5SHY4045L00013BHB0181 62R0001 has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, and low manufacturing cost, high yield, and has good application prospects. 5SHY4045L0001 3BHB0181 62R0001 GTO using thyristor technology is a commonly used high-power turnoff device, which has higher performance in cutoff voltage compared to IGBTs using transistor technology. However, the widely used standard GTO driving technology causes uneven turn-on and turn-off processes, requiring costly dv/dt and di/dt absorption circuits and high-power gate driving units, resulting in reduced reliability, higher prices, and unfavorable series connection. However, before the maturity of high-power MCT technology, IGCT has become the preferred solution for high-voltage and high-power low-frequency AC converters.
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