NI PXI-7344 输出电流随输入栅极电压变化的比率NI PXI-7344上显示了IGBT的等效电路。这与达林顿晶体管中使用的电路结构相同,其中两个晶体管以完全相同的方式连接。正如我们在上面的看到的,IGBT结合了两种设备,沟道金属氧化物半导体场效应晶体管和PNP晶体管。沟道MOSFET驱动PNP晶体管。标准BJT引脚排列包括集电极、发射极、基极,标准MOSFET引脚排列包括栅极、漏极和源极。但是在的情况下IGBT晶体管引脚,它来自N沟道MOSFET和收藏者和发射器来自PNP晶体管。
该路径由N沟道MOSFET控制。通过将输出电流除以输入电流。但是,NI PXI-7344不是电流控制器件;它是一个电压控制器件,MOSFET栅极上没有输入电流。因此,用于计算BJT增益的公式不适用于MOSFET技术。MOSFET的栅极与电流传导路径隔离。MOSFET的栅极电压改变了输出电流的传导。因此,增益是输出电压变化与输入电压变化的比值。对IGBT来说确实如此。一个IGBT增益是输出电流随输入栅极电压变化的比率。NI PXI-7344在PNP晶体管中,集电极和发射极是传导路径,当IGBT接通时,它导通并通过它传送电流。
The ratio of output current to input gate voltage variation in NI PXI-7344 shows the equivalent circuit of IGBT. This is the same circuit structure used in Darlington transistors, where two transistors are connected in exactly the same way. As we can see in the above image, IGBT combines two devices, channel metal oxide semiconductor field-effect transistor and PNP transistor. Channel MOSFET drives PNP transistors. The standard BJT pin arrangement includes collector, emitter, and base, while the standard MOSFET pin arrangement includes gate, drain, and source. However, in this case, the IGBT transistor pins come from N-channel MOSFETs and collectors and emitters come from PNP transistors.
This path is controlled by an N-channel MOSFET. By dividing the output current by the input current. However, NI PXI-7344 is not a current control device; It is a voltage control device with no input current on the MOSFET gate. Therefore, the formula used to calculate BJT gain is not applicable to MOSFET technology. The gate of MOSFET is isolated from the current conduction path. The gate voltage of MOSFETs changes the conduction of output current. Therefore, gain is the ratio of the change in output voltage to the change in input voltage. This is indeed the case for IGBT. An IGBT gain is the ratio of output current to input gate voltage variation. In PNP transistors, the collector and emitter are conduction paths in NI PXI-7344. When the IGBT is turned on, it conducts and transmits current through it.
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