5SHY4045L0001 3BHB018162R0001集成栅极换流晶闸管IGCT(Intergrated Gate Commutated Thyristors)是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一 种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功半导体开关器件，具有晶闸管的通态特性及晶体管的开关特性。5SHY4045L0001 3BHB018162R0001由于采用了缓冲结构以及浅层发射极技术,因而使动态损耗降低了约50%，另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二极管 ，从而以其独特的方式实现了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性有机结合.
5SHY4045L0001
5SHY4045L0001
5SHY4045L0001 3BHB018162R0001 Integrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor device introduced in 1996 for use in giant power electronic complete sets. IGCT is a new high-power semiconductor switching device based on GTO structure, utilizing integrated gate structure for gate hard drive, using buffer layer structure and anode transparent emitter technology. It has the on state characteristics of thyristors and the switching characteristics of transistors. 5SHY4045L0001 3BHB018162R0001 uses a buffer structure and shallow emitter technology, which reduces dynamic losses by about 50%. In addition, this type of device integrates a continuous current diode with good dynamic characteristics on one chip, achieving a unique combination of low pass state voltage drop, high blocking voltage, and transistor stable switching characteristics of the thyristor
5SHY4045L0001
5SHY4045L0001
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5SHY4045L0001
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