IGCT集成门极换流晶闸管(Intergrated Gate Commutated Thyristors)是一种中压变频器开发的用于巨型电力电子成套装置中的电力半导体开关器件(集成门极换流晶闸管=门极换流晶闸管+门极单元)。1997年由ABB公司提出。IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。
5SHY4045L0006
5SHY4045L0006
IGCT是将GTO芯片与反并联二极管和门极驱动电路集成在-起，再与其门极驱动器在外围以低电感方式连接,结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点,在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT 具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特点，而且造成本低，成品率高，有很好的应用前景。
5SHY4045L0006
5SHY4045L0006
IGCT Integrated Gate Commutated Thyristors are a type of power semiconductor switching device developed for medium voltage inverters and used in giant power electronic complete sets (Integrated Gate Commutated Thyristors=Gate Commutated Thyristors+Gate Units). Proposed by ABB in 1997. IGCT has made significant progress in power, reliability, switching speed, efficiency, cost, weight, and volume of converter devices, bringing a new leap to power electronic complete sets of devices. IGCT integrates GTO chips with anti parallel diodes and gate drive circuits, and then connects them with their gate drivers in a low inductance manner on the periphery. It combines the stable turn-off ability of transistors and the advantages of low on state losses of thyristors, exerting the performance of thyristors during the conduction phase and presenting transistor characteristics during the turn-off phase. IGCT has the characteristics of high current, high blocking voltage, high switching frequency, high reliability, compact structure, low conduction loss, and low manufacturing cost, high yield, and has good application prospects.
5SHY4045L0006
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